Advancements in integrated circuits are not only driving our electronic devices to become more powerful but also increasingly compact. This trend towards miniaturization in microelectronics has been rapidly progressing, with scientists striving to accommodate more semiconducting components onto a single chip.
However, the challenge lies in the inherent constraints posed by the diminutive size of microelectronics. To prevent overheating, these devices must consume only a fraction of the electricity compared to conventional electronics while maintaining peak performance.
Researchers at the U.S. Department of Energy‘s (DOE) Argonne National Laboratory have achieved a breakthrough that could pave the way for a new generation of microelectronic materials capable of meeting these demands. In a groundbreaking study published in Advanced Materials, the Argonne team introduced a novel “redox gating” technique designed to regulate the movement of electrons within a semiconducting material.
“Redox” denotes a chemical reaction facilitating the transfer of electrons. Typically, microelectronic devices rely on an electric “field effect” to manage the flow of electrons. In their experiment, the scientists devised a device capable of controlling electron flow from one point to another by applying a voltage—a form of pressure—to a material serving as an electron gate. Upon reaching a specific threshold, approximately half a volt, the material commenced injecting electrons through the gate from a source redox material into a channel material.
By utilizing voltage to manipulate electron flow, the semiconducting device could mimic a transistor, transitioning between more conductive and more insulating states.
“This new redox gating strategy enables us to modulate electron flow to a significant degree even at low voltages, offering vastly improved power efficiency,” remarked Argonne materials scientist Dillon Fong, a study co-author. “Furthermore, it safeguards the system from damage. We’ve observed that these materials can undergo repeated cycles with minimal degradation in performance.”
“Controlling the electronic properties of a material also holds immense promise for researchers exploring emergent properties beyond conventional devices,” added Argonne materials scientist Wei Chen, co-corresponding author of the study.
“The subvolt regime, in which this material operates, is of great interest to scientists aiming to develop circuits that emulate the functioning of the human brain, renowned for its exceptional energy efficiency,” Chen emphasized.
Furthermore, the redox gating phenomenon could prove invaluable in the creation of new quantum materials, enabling the manipulation of phases at low power, noted Argonne physicist Hua Zhou, another co-corresponding author of the study. Additionally, the redox gating technique holds potential across various functional semiconductors and low-dimensional quantum materials composed of sustainable elements.
In addition to Fong, Chen, and Zhou, contributing authors include Le Zhang, Changjiang Liu, Hui Cao, Andrew Erwin, Dillon Fong, Anand Bhattacharya, Luping Yu, Liliana Stan, Chongwen Zou, and Matthew V. Tirrell.