Argonne National Laboratory, under the U.S. Department of Energy (DOE), has achieved a groundbreaking advancement that could revolutionize the development of low-power semiconductors and quantum devices. This breakthrough, published in the prestigious journal Advanced Materials, introduces a novel “redox gating” technique capable of finely controlling the flow of electrons in semiconducting materials.
In an era where integrated circuits are becoming increasingly powerful yet smaller in size, microelectronics face a critical challenge of minimizing energy consumption while maintaining optimal performance. To address this challenge, researchers at Argonne proposed a new approach utilizing redox chemistry to regulate electron movement within semiconductors.
Traditionally, microelectronic devices rely on electric field effects to manage electron flow. However, the redox gating technique introduced by the Argonne team offers a more efficient method of electron modulation. By applying a voltage across a specialized material, akin to applying pressure, electrons can be precisely directed from one end to another. This process allows for the creation of semiconductor devices that can switch between highly conducting and insulating states, akin to transistors, with remarkable efficiency.
Dr. Dillon Fong, a materials scientist at Argonne and co-author of the study, hailed the redox gating strategy for its potential to significantly enhance power efficiency while ensuring the longevity of electronic systems. The materials developed through this technique exhibit exceptional stability, even under repeated cycling, highlighting their suitability for practical applications.
Moreover, Dr. Wei Chen, another co-corresponding author of the study, emphasized the broader implications of controlling electronic properties, particularly in the realm of emergent technologies. The ability to operate in the subvolt regime opens doors to developing circuits that mimic the energy-efficient functionality of the human brain, presenting exciting opportunities for advanced computing systems.
The versatility of the redox gating phenomenon extends beyond conventional microelectronics, as noted by Dr. Hua Zhou, an Argonne physicist and co-corresponding author. This technique holds promise for creating new quantum materials with controllable phases, offering unprecedented possibilities in the realm of quantum computing and beyond.
The research, conducted at Argonne’s Advanced Photon Source and Center for Nanoscale Materials—both DOE Office of Science user facilities—was supported by funding from DOE’s Office of Basic Energy Sciences and Argonne’s laboratory-directed research and development program.
The study, titled “Redox Gating for Colossal Carrier Modulation and Unique Phase Control,” underscores the collaborative efforts of scientists from various disciplines, including Le Zhang, Changjiang Liu, Hui Cao, Andrew Erwin, Anand Bhattacharya, Luping Yu, Liliana Stan, Chongwen Zou, and Matthew V. Tirrell.
This breakthrough not only advances the field of microelectronics but also contributes to DOE’s broader mission of driving innovation and advancing scientific knowledge. As the quest for energy-efficient technologies continues, the redox gating technique stands out as a promising avenue towards realizing the next generation of electronic devices.