Researchers at Lehigh University in the United States have made a groundbreaking discovery that could significantly enhance the efficiency of future solar panels.
The team at Lehigh University has developed a novel material capable of achieving an absorption efficiency rate of 190 percent of the theoretical efficiency limit for conventional silicon-based solar cells.
“This breakthrough represents a remarkable advancement in our quest for sustainable energy solutions, showcasing innovative approaches that hold the potential to redefine both the efficiency and accessibility of solar energy in the near term,” commented Chinedu Ekuma, a professor of physics at Lehigh University.
Tests conducted on the material have revealed its exceptional performance, particularly in absorbing infrared light and the visible regions of the electromagnetic spectrum.
The material boasts an external quantum efficiency (EQE) of 190 percent, a critical metric for assessing solar cell efficiency. EQE measures the generation of one electron for each photon absorbed from sunlight. The material’s ability to capture more than one electron from a single photon contributes to its remarkably high EQE rate.
The key to this achievement lies in leveraging what scientists call “van der Waals gaps” – infinitesimal spaces between layered two-dimensional materials.
“Through its swift response and heightened efficiency, Cu-intercalated GeSe/SnS demonstrates immense potential as a quantum material for advanced photovoltaic applications, offering a pathway for enhancing the efficiency of solar energy conversion,” explained Professor Ekuma.
“It emerges as a promising contender for the development of next-generation, highly efficient solar cells, which will play a pivotal role in meeting global energy demands.”
Professor Ekuma and his team are now focused on transforming this experimental material into one that can be seamlessly integrated into existing renewable energy infrastructure.
The research findings were detailed in a study titled ‘Chemically tuned intermediate band states in atomically thin CuxGeSe/SnS quantum material for photovoltaic applications,’ published in the journal Science Advances on Wednesday.